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Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

机译：用频率相关电容和电导分析研究高al含量alGaN / GaN高电子迁移率晶体管的陷阱态

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Jie-Jie Zhu; Xiao-Hua Ma; Bin Hou; Wei-Wei Chen; Yue Hao;
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年度 2014
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1. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis [J] . Jie-Jie Zhu, Xiao-Hua Ma, Bin Hou, AIP Advances . 2014,第3期

机译：通过频率依赖性电容和电导分析研究高Al含量的AlGaN / GaN高电子迁移率晶体管中的陷阱态
2. Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis [J] . Quan si, Hao Yue, Ma xiao-Hua, 中国物理：英文版 . 2011,第001期

机译：通过频率依赖性电容和电导分析研究AlGaN / GaN氟等离子体处理增强型高电子迁移率晶体管
3. Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis [J] . 全思, 郝跃, 马晓华, 中国物理：英文版 . 2011,第001期

机译：通过频率依赖性电容和电导分析研究AlGaN / GaN氟等离子体处理增强型高电子迁移率晶体管
4. Analysis of trap states effects on the frequency-dependent capacitance and conductance of an AlGaN/GaN heterostructure [C] . Telia A., Meziani A., Soltani A. International Conference on Signals, Circuits and Systems . 2008

机译：陷阱状态对AlGaN / GaN异质结构的频率依赖电容和电导的影响分析
5. Design, simulation and fabrication of AlGaN/GaN normally-off high electron mobility transistors with investigation on temperature stability [D] . Yun-Hsiang, Wang. 2016

机译：常压高电子迁移率晶体管的设计，仿真和制造，具有温度稳定性研究
6. Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors [O] . Yu-Shyan Lin, Shin-Fu Lin 2021

机译：钝化AlGaN / GaN高电子移动晶体管的大信号线性和高频噪声
7. Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement [O] . Bin Dong, Jie Lin, Ning Wang, 2016

机译：室温瞬态电容测量对alGaN / GaN高电子迁移率晶体管的陷阱行为表征

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

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